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| BUZ45B Semiconductor Data Sheet October 1998 File Number 2259.1 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET Features * 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power * rDS(ON) = 0.500 (BUZ45 field effect transistor designed for applications such as * SOA is Power Dissipation Limited B) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching * Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. 10A, * Linear Transfer Characteristics This type can be operated directly from integrated circuits. 00V, * High Input Impedance .500 Formerly developmental type TA17435. * Majority Carrier Device hm, Nhannel Ordering Information Symbol PART NUMBER PACKAGE BRAND ower D BUZ45B TO-204AA BUZ45B OSNOTE: When ordering, use the entire part number. ET) G /Author ) S /Keyords Harris emiPackaging onducJEDEC TO-204AA or, Nhannel ower DRAIN OS(FLANGE) ET, O04AA) SOURCE (PIN 2) /Creator GATE (PIN 1) ) /DOCIN O pdfark /Pageode /UseOutines /DOCIEW 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright (c) Harris Corporation 1998 BUZ45B Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ45B 500 500 10 40 20 125 1.0 -55 to 150 E 55/150/56 260 UNITS V V A A V W W/oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current (TC = 35oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 1mA (Figure 9) TJ = 25oC, VDS = 500V, VGS = 0V TJ = 125oC, VDS = 500V, VGS = 0V VGS = 20V, VDS = 0V ID = 5A, VGS = 10V (Figure 8) VDS = 25V, ID = 5A (Figure 11) VCC = 30V, ID 2.9A, VGS = 10V, RGS = 50, RL = 10. (Figures 14, 15) MIN 500 2.1 2.7 VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) TYP 3 20 100 10 0.49 5 50 80 330 110 3800 250 100 1 35 MAX 4 250 1000 100 0.50 75 120 430 140 4900 400 170 UNITS V V A A nA S ns ns ns ns pF pF pF oC/W oC/W Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient IGSS rDS(ON) gfs td(ON) tr td(OFF) tf CISS COSS CRSS RJC RJA Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulsed Source to Drain Current Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge NOTES: 2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). SYMBOL ISD ISDM VSD trr QRR TJ = 25oC, ISD = 20A, VGS = 0V TJ = 25oC, ISD = 10A, dISD/dt = 100A/s, VR = 100V TC = 25oC TEST CONDITIONS MIN TYP 1.3 1200 12 MAX 10 40 1.7 UNITS A A V ns C 2 BUZ45B Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 ID, DRAIN CURRENT (A) Unless Otherwise Specified 12 VGS 10V 10 8 6 0.6 0.4 4 2 0.2 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 0 0 50 100 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE 1 D= 0.5 0.2 PDM 0.1 0.1 0.05 0.02 0.01 0 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 0.01 10-5 FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 102 0.8s ID, DRAIN CURRENT (A) 10s 100s OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) TJ = MAX RATED TC = 25oC 101 102 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) 30 PD = 125W 20V 20 10V 8.0V 7.5V VGS = 7.0V VGS = 6.5V 10 VGS = 6.0V VGS = 5.5V VGS = 5.0V VGS = 4.5V VGS = 4.0V 0 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 PULSE DURATION = 80s TJ = 25oC 101 100 1ms 10ms 100ms DC 103 10-1 100 0 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 3 BUZ45B Typical Performance Curves IDS(ON), DRAIN TO SOURCE CURRENT (A) 15 PULSE DURATION = 80s VDS = 25V TJ = 25oC Unless Otherwise Specified (Continued) 2.0 rDS(ON), ON-STATE RESISTANCE () PULSE DURATION = 80s VGS = 5V 5.5V 6V 6.5V 7V 1.5 10 1.0 7.5V 8V 9V 10V 20V 5 0.5 0 0 5 VGS, GATE TO SOURCE VOLTAGE (V) 10 0 0 10 20 ID, DRAIN CURRENT (A) 30 FIGURE 6. TRANSFER CHARACTERISTICS FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT rDS(ON), DRAIN TO SOURCE ID = 5A VGS = 10V PULSE DURATION = 80s VGS(TH), GATE THRESHOLD VOLTAGE (V) 50 100 150 1.6 4 VDS = VGS, ID = 1mA ON RESISTANCE () 1.2 3 0.8 2 0.4 1 0 -50 0 0 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 101 gfs, TRANSCONDUCTANCE (S) 40 CISS C, CAPACITANCE (nF) 7 6 5 4 3 2 1 0 PULSE DURATION = 80s VDS = 25V TJ = 25oC 100 COSS 10-1 VGS = 0, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGS 0 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) CRSS 10-2 0 5 10 ID, DRAIN CURRENT (A) 15 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 4 BUZ45B Typical Performance Curves 102 ISD, SOURCE TO DRAIN CURRENT (A) Unless Otherwise Specified (Continued) 15 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80s ID = 14.4A 101 TJ = 150oC TJ = 25oC 100 10 VDS = 100V VDS = 400V 5 10-1 0 0.5 1.0 1.5 VSD, SOURCE TO DRAIN VOLTAGE (V) 2.0 0 0 20 40 60 80 100 120 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 14. SWITCHING TIME TEST CIRCUIT VDS (ISOLATED SUPPLY) FIGURE 15. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0.2F 50k 0.3F G DUT 0 Ig(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR Ig(REF) 0 FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS 5 |
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